Power Semiconductor Research Engineer

Fuji Electric

Research

Hardware

Electrical

Flexible

About this role

A research and development position in power semiconductors, based at the Next-Generation Semiconductor Research Center of Fuji Electric's Advanced Technology Laboratory. The work is basic research on power devices made from next-generation materials such as SiC and GaN, for automotive and industrial uses.

Assignments follow the hire's background: property analysis (electrical characterisation, analytical evaluation, first-principles calculation) to explain device and process mechanisms; process development to improve device characteristics; and SiC/GaN device design, prototyping and evaluation of electrical characteristics and reliability. New members start on part of a theme, with a path to leading a team.

Requires a university or graduate degree and either material property analysis experience or R&D experience in SiC/GaN processes or power semiconductor devices. Early-career applicants may apply with university research alone.

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